Chemical Metalurgical Shop > Monocrystalline Silicon ingote |
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| Technical characteristics
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Standart values
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| Diameter, mm
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75 - 150 (200)
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| Orientation
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(100),(111)
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| Off - Orientation
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+/- 30
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| Dopant
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B, P, As
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| Oxygen content, ppma
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10 - 20
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| Carbon content, ppma
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< 2,0
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| Carrier lifetime (solar grade), msec.
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> 10
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| Resistivity, Ohm*cm
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0,002-60
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| Total resestivity variation, %
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+/- 20
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| Radial resistivity variation (RRV), %
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+/- 15
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| Dislocation density, cm-2
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< 100
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| Technical requirements
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ТУ 48-4-295-82
ТУ 48-4-295-83
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